1 Cassette (qty. 25) of 100 mm N Type (P-doped) SEMI Standard Prime Grade Silicon Wafer <100>, 1-10 ohm-cm, Single Side Polished, 4 inch Si Wafer

Product Specifications

• Material: Single Crystal Silicon Wafer
• Growth Method: MCZ
• Orientation: <100>
• Diameter: 100 mm +/- 0.5 mm
• Thickness: 525 um +/- 20 um (SSP)
• Primary Flat Orientation: <110> +/-1 deg
• Primary Flat Length: 32.5 +/- 2.5 mm
• Secondary Flat Orientation: 90 deg from primary flat
• Secondary Flat Length: 18.0 +/- 2.0 mm
• Type/ Dopant: N/ Phosphorus
• Thermal Expansion Coefficient: 2.6·10^-6°C ^-1
• Electrical Resistivity: 1-10 ohm-cm
• RRV: 8% (6mm)
• Oxygen Content: 1.6 x 10^18 atoms/cm3
• Carbon Content: 0.5 ppm
• GBIR/ TTV: 5 µm
• WARP: 30 µm
• BOW: 30 µm
• Front Surface: CMP Polished, Ra < 0.5 nm (single side polished, SSP)
• Package: Packaged in a class 100 clean room environment, in cassettes of 25 wafers.